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Transistor
2SC4808
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Unit: mm
1.60.15
1.60.1
q q q
1.00.1
0.5
q
Low noise figure NF. High gain. High transition frequency fT. SSMini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
1
0.5
3
2
0.450.1 0.3
0.750.15
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Ratings 15 10 2 80 125 125 -55 ~ +125
Unit V V V mA mW C C
1:Base 2:Emitter 3:Collector
EIAJ:SC-75 SS-Mini Type Package
Marking symbol : 3M
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure
(Ta=25C)
Symbol ICBO IEBO VCBO VCEO hFE fT Cob | S21e NF |2 GUM Conditions VCB = 10V, IE = 0 VEB = 2V, IC = 0 IC = 10A, IE = 0 IC = 100A, IB = 0 VCE = 8V, IC = 20mA* VCE = 8V, IC = 15mA, f = 800MHz VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 15mA, f = 800MHz VCE = 8V, IC = 15mA, f = 800MHz VCE = 8V, IC = 7mA, f = 800MHz
*
min
typ
0 to 0.1
s Absolute Maximum Ratings
(Ta=25C)
0.20.1
max 1 1
0.15-0.05
+0.1
0.2-0.05
s Features
0.4
0.80.1
0.4
+0.1
Unit A A V V
15 10 50 5 150 6 0.7 11 14 15 2 1.2 300
GHz pF dB dB dB
Pulse measurement
1
Transistor
PC -- Ta
150 24 Ta=25C 125 20 IB=200A 100
2SC4808
IC -- VCE
120 VCE=8V
IC -- VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
Collector current IC (mA)
180A 160A 16 140A 120A 12 100A 80A 60A 4 40A 20A
25C Ta=75C 80 -25C
100
75
60
50
8
40
25
20
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 IC/IB=10 600
hFE -- IC
12 VCE=8V
fT -- IC
VCE=8V f=800MHz Ta=25C
Forward current transfer ratio hFE
500
Transition frequency fT (GHz)
10 30 100
10
400 Ta=75C 300 25C 200 -25C 100
8
Ta=75C 25C -25C
6
4
2
0.3
1
3
10
30
100
0 0.1
0.3
1
3
0 0.1
0.3
1
3
10
30
100
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
Collector output capacitance Cob (pF)
IE=0 f=1MHz Ta=25C
GUM -- IC
Maximum unilateral power gain GUM (dB)
24 VCE=8V f=800MHz Ta=25C 12
NF -- IC
VCE=8V (Rg=50) f=800MHz Ta=25C
2.4
2.0
20
10
1.6
16
Noise figure NF (dB)
0.3 1 3 10 30 100
8
1.2
12
6
0.8
8
4
0.4
4
2
0 0.1
0.3
1
3
10
30
100
0 0.1
0 0.1
0.3
1
3
10
30
100
Collector to base voltage VCB (V)
Collector current IC (mA)
Collector current IC (mA)
2

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